Effects of growth parameters on silicon molten zone formed by infrared convergent-heating floating zone method
نویسندگان
چکیده
منابع مشابه
Floating Zone Growth of Bi2Sr2Ca2Cu3Oy Superconductor
The crystal growth of high-temperature oxide superconductors has been hampered by the complexities of these materials and the lack of knowledge of corresponding phase diagrams. The most common crystal growth technique adopted for these materials is the so-called “Flux” method. This method, however, suffers from several drawbacks: (i) crystals are often crucible and flux contaminated; (ii) cryst...
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Mirror tilting effects on the interface shape during crystal growth and on the etch pit density of the grown crystals were studied using a tilting-mirror-type image furnace. With increase of tilting angle of mirrors, convexities of both melt-feed and melt-crystal interface and the etch pit density of the grown crystal were systematically reduced. The melt zone, which is formed during crystal gr...
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Cupric oxide inclusions in cuprous oxide crystals grown by the floating zone method
Phase-pure cuprous oxide (Cu2O) crystals are difficult to grow since cupric oxide can form within the crystal as the crystal is cooled to ambient conditions. Vacancies are the solute which causes precipitation of macroscopic defects. Therefore, even when a mostly phase-pure single crystal is used as a feed rod, cupric oxide inclusions persist in the recrystallized solid. Control of the thermal ...
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ژورنال
عنوان ژورنال: Journal of Crystal Growth
سال: 2017
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2016.11.102